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| to ? 92l 1. emitter 2. collector 3. base to-92l plastic-encapsulate transistors 2SB649/2SB649a transistor (pnp) features z high collector current z high collector-emitter breakdown voltage z low saturation voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -180 v 2SB649 -120 collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 2SB649a -160 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-160v,i e =0 -10 a emitter cut-off current i ebo v eb =-4v,i c =0 -10 a 2SB649 60 320 h fe(1) v ce =-5v, i c =-150ma 2SB649a 60 200 dc current gain h fe(2) * v ce =-5v, i c =-500ma 30 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -1 v base-emitter voltage v be v ce =-5v, i c =-150ma -1.5 v collector output capacitance c ob v cb =-10v,i e =0, f=1mhz 27 pf transition frequency f t v ce =-5v,i c =-150ma 140 mhz *pulse test classification of h fe(1) 2SB649 type 2SB649a rank b c d range 60-120 100-200 160-320 symbol parameter value unit v cbo collector-base voltage -180 v 2SB649 -120 v ceo collector-emitter voltage 2SB649a -160 v v ebo emitter-base voltage -5 v i c collector current -1.5 a p c collector power dissipation 900 mw r ja thermal resistance from junction to ambient 1 39 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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